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IMAGE SENSOR
InGaAs linear image sensor
G9211 to G9214/G9205 to G9208 series
Near infrared image sensors (0.9 to 1.67 m / 2.55 m)
G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an offset compensation circuit, a shift register and a timing generator formed on a CMOS chip. The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode array. Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation in the near infrared spectral range. The package is hermetically sealed for high reliability. Signal processing circuits on the CMOS chip allow selecting a feedback capacitance (Cf) of 10 pF or 0.5 pF by using an external voltage input. The image sensor operates over a wide dynamic range when Cf=10 pF and delivers high gain when Cf=0.5 pF.
Features
Applications
512 ch: 2 video lines s Selection guide
Type No. G9211-256S G9212-512S G9213-256S G9214-512S G9205-256W G9206-256W G9207-256W G9208-256W
l Wide dynamic range l Low noise and low dark current l Selectable gain l Anti-saturation circuit l CDS circuit *1 l Offset compensation circuit l Simple operation (by built-in timing generator) *2 l High resolution: 25 m pitch (512 ch) l Low cross-talk l 256 ch: 1 video line
Cooling Number of pixels 256 512 256 512
l Near infrared multichannel spectrophotometry l Radiation thermometry l Non-destructive inspection
Related products
l InGaAs multichannel detector head C8061-01, C8062-01 l Multichannel detector head controller C7557
Pixel pitch (m) 50 25 50 25
Pixel size [m (H) x m (V)] 50 25 50 25 x x x x 250 250 500 500
Spectral response range (m)
Defective pixel
One-stage TE-cooled
0.9 to 1.70
1 % Max. * 3
Two-stage TE-cooled
256
50
50 x 250
0.9 0.9 0.9 0.9
to to to to
1.85 2.05 2.25 2.55
5 % Max.
*1: CDS (Correlated Double Sampling) circuit A major source of noise in charge amplifiers is the reset noise generated when the integration capacitance is reset. A CDS circuit greatly reduces this reset noise by holding the signal immediately after reset to find the noise differential. *2: Timing generator Different signal timings must be properly set in order to operate a shift register. In conventional image sensor operation, external PLDs (Programmable Logic Devices) are used to input the required timing signals. However, G9211 to G9214/G9205 to G9208 series image sensors internally generate all timing signals on the CMOS chip just by supplying CLK and RESET pulses. This makes it simple to set the timings. *3: Percentage of defective pixels If your application requires sensors with no defective pixels, please select G9201 series.
s Spectral response
1.5 T=25 C T= -10 C (G9208-256W: T= -20 C)
(Typ.)
PHOTO SENSITIVITY (A/W)
G9208-256W G9211 TO G9214 SERIES 1.0
0.5
0 0.5
1.0
1.5
2.0
2.5
3.0
WAVELENGTH (m)
KMIRB0022EA
1
InGaAs linear image sensor
s Absolute maximum ratings
Parameter Clock pulse voltage Operating temperature *1 Storage temperature *1 *1: Non condensation
G9211 to G9214/G9205 to G9208 series
Value 5.5 -40 to +70 -40 to +85 Unit V C C
Symbol V Topr Tstg
s Electrical characteristics (Ta=25 C, V=5 V)
Parameter Supply voltage Ground Element bias Clock frequency Clock pulse voltage Clock pulse rise/fall times Clock pulse width Reset pulse voltage Reset pulse rise/fall times Reset pulse width Video output voltage Data rate high low high low high low Symbol Vdd Vref Vss INP f V tr tf tpw V (RES) tr (RES) tf (RES) tpw (RES) VH VL fV Min. 4.5 3.5 0.1 V - 0.5 0 0 200 V - 0.5 0 0 6000 Typ. 5.0 1.26 0 4.5 V 0 20 V 0 20 4.1 1.26 f/8 Max. 5.5 4.6 4 V + 0.5 0.4 100 V + 0.5 0.4 100 Unit V V V MHz V V ns ns V V ns ns V Hz
s Electrical and optical characteristics (G9211 to G9214 series: T=25 C, G9205 to G9208 series: T= -20 C)
Parameter Symbo l p G9211 to G9214 series Min. Typ. Max. 1.55 G9205 G9206 G9207 G9208 G9205 to G9208 series Min. Typ. Max. 1.75 1.95 2.05 2.3 30 300 10 *4 Unit
Peak sensitivity wavelength
m pC Vrms %
Saturation charge *2 Qsat 30 RMS noise voltage N 180 300 180 (Readout noise) Photo response non-uniformity PRNU 5 *3 *2: V=5 V, Cf=10 pF *3: 50 % of saturation, integration time: 10 ms, after dark output subtraction, excluding first and last pixels. *4: 50 % of saturation, integration time: 3 ms, after dark output subtraction, excluding first and last pixels.
Dark current characteristics (T=25 C)
Parameter G9211-256S G9212-512S G9213-256S G9214-512S G9205-256W *5 G9206-256W *5 G9027-256W *5 G9208-256W *5 *5: TD= -20 C Symbol Min. Typ. 2 1 4 1 15 30 200 500 Max. 10 5 20 5 60 120 800 2000 Unit
ID
pA
2
InGaAs linear image sensor
s Equivalent circuit
q 1 PIXEL (
G9211 to G9214/G9205 to G9208 series
)
Cf=10 pF Cf=0.5 pF SHIFT REGISTER
CDS PHOTODIODE
OFFSET COMPENSATION
VIDEO
AD-TRIG TIMING GENERATOR
Vdd
INP Vss
CLK
RESET
Vref
EXTERNAL INPUT
KMIRC0010EB
s Timing chart
CLK (INPUT)
RESET (INPUT) INTEGRATION 2 CLOCKS TIME 8 CLOCKS 8 CLOCKS TRIGGER (OUTPUT) VIDEO (OUTPUT) 8 x N CLOCKS (READOUT TIME) 10 CLOCKS MIN.
1 ch
2 ch
(n-1) ch
n ch
s Basic circuit connection
CLK RESET Vref Vdd Cf SELECT INP Vss VIDEO AD-TRIG BUFFER BUFFER
KMIRC0016EA
KMIRC0012EA
3
InGaAs linear image sensor
s Dimensional outline (unit: mm)
G9211 to G9214/G9205 to G9208 series
63.5 0.15 53.3 0.15 38.1 0.15 35.6 0.15
28
3.0 0.15
15 27.2 0.15
20.3 0.15
25.4 0.15
22.9 0.15
10.2 0.15
12 INDEX MARK
14
A
A
B 1.0 0.2 6.4 1
B
ONE-STAGE TE-COOLED 6.15 3.6 TWO-STAGE TE-COOLED 7.25 4.5 (28 x) 2.54 (28 x) 0.46
KMIRA0011EA
s Pin connection (top view)
256 PIXELS 512 PIXELS
TE +
Cf SELECT RESET TE AD-TRIG Vdd Vss INP CLK Vref VIDEO
RESET-EVEN TE + AD-TRIG-EVEN THERM THERM CASE CLK-EVEN
Cf SELECT RESET-ODD TE AD-TRIG-ODD Vdd Vss INP CLK-ODD
THERM THERM CASE
Vref VIDEO-EVEN VIDEO-ODD
KMIRC0013EA
Terminal name CLK RESET Vdd Vss INP Cf SELECT CASE THERM TE+, TEAD-TRIG VIDEO Vref
Input/Output Input (CMOS logic compatible) Input (CMOS logic compatible) Input Input Input Output Output Input
Function and recommended connection Clock pulse for operating the CMOS shift register Reset pulse for initializing the feedback capacitance in the charge amplifier formed on the CMOS chip. The width of the reset pulse is integration time. Supply voltage for operating the signal processing circuit on the CMOS chip. Ground for the signal processing circuit on the CMOS chip. Reset voltage for the charge amplifier array on the CMOS chip. Voltage that determines the feedback capacitance (Cf) on the CMOS chip. Cf=10 pF at 0 V, and Cf=0.5 pF at 5 V. This terminal is electrically connected to the package. Thermistor for monitoring temperature inside the package. Power supply terminal for the thermoelectric cooler that cools the photodiode array. No connection for room temperature operation type. Digital signal for AD conversion; positive polarity Analog video signal; positive polarity Reset voltage for the offset compensation circuit at the CMOS chip
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2003 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
4
Cat. No. KMIR1011E02 Jun. 2003 DN

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